相关实验视频

Updated: Jan 7, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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高性能p-Cu2O/n-β-Ga2O3异质连接屏障 施托基二极管与铜接触

Xiaohui Wang1,2, Xuhui Liu1, Mujun Li2

  • 1Peng Cheng Laboratory, Shenzhen 518000, China.

Nanomaterials (Basel, Switzerland)
|December 24, 2025
PubMed
概括

制造了高性能氧化铜/氧化异质连接屏障Schottky (JBS) 二极管. 这些二极管表现出优异的高压性能和稳定性,使它们适合电力电子.

关键词:
二氧化 (Cu2O) 是一种在JBS二极管中,二极管低工作功能的低工作功能.电力电子产品的动力电子.这就是β-Ga2O3的含量.

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