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高可靠性和GaN HEMT在独立的GaN基板上的断裂电压

Shiming Li¹, Mei Wu¹, Ling Yang¹

¹National Engineering Research Center of Wide Band-Gap Semiconductor, Faculty of Integrated Circuit, Xidian University, Xi'an 710126, China.

Nanomaterials (Basel, Switzerland)

|December 24, 2025

概括

化-化 (GaN-on-GaN) 高电子流动性晶体管 (HEMT) 为功率电子提供了卓越的可靠性和性能. 与GaN-on-GaN碳化 (GaN-on-SiC) 设备相比,GaN-on-GaN HEMT在压力下显著降低了降解.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

基于化 (GaN) 的高电子移动性晶体管 (HEMT) 对于先进的功率切换至关重要.
传统的GaN-on-silicon carbide (GaN-on-SiC) HEMT面临的可靠性挑战是由于格子不匹配和异质基板中的高位移密度.
这些局限性阻碍了GaN HEMT在高压应用中的全部潜力.

研究的目的:

系统地调查和比较GaN-on-GaN HEMT与GaN-on-SiC HEMT的电性能和可靠性.
阐明材料结构对各种电应力条件下的设备稳定性的影响.
建立GaN-on-GaN技术作为高效,高压功率电子产品的可行解决方案.

主要方法:

对GaN-on-GaN和GaN-on-SiC HEMT进行比较分析.
电气特性包括直流性能,反向门阶段应力,非状态排水阶段应力和状态电压测试.
使用高分辨率X射线衍射 (HRXRD) 和拉曼光谱进行材料分析,以评估脱位密度和应力.

主要成果:

由于其均的表轴结构,GaN-on-GaN装置显示出83.3%的脱位密度降低和最小化的拉伸应力.
在GaN-on-GaN HEMT中,获得了950MW/cm2的创纪录的功率 (BFOM),具有0.6mΩ·cm2的低特定电阻 (R_ON-SP) 和755V的高断电压 (BV).
与GaN-on-GaN HEMT相比,GaN-on-GaN HEMT在没有降解的情况下承受了显著更高的门 (-200 V) 和排水 (> 200 V) 电压,而GaN-on-SiC HEMT则分别在 -95 V 和 150 V 处失败.

结论:

在GaN-on-GaN HEMT中减少的脱位密度有效地抑制了泄漏通道和缺陷引起的降解,提高了设备的可靠性.
在苛刻的应力条件下,GaN-on-GaN技术提供了卓越的电性能和长期稳定性,优于传统的GaN-on-SiC HEMT.
加N-on-GaN HEMT代表了高压电力电子设备的变革性进步,使得更高的效率和更高的运行稳定性成为可能.

关键词:

断裂电压 (BV) 是一个这是一种失调,失调的失调.一个独立的GaN基板.化 (GaN) 是一种化.高电子移动性晶体管 (HEMT) 的使用可靠性的可靠性

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