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在β-Ga2O3 MOSFET中通过等离子处理调节缺陷介导的门电压

Lisheng Wang1, Yifan Zhang1, Junxing Dong1

  • 1State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.

Nanomaterials (Basel, Switzerland)
|December 24, 2025
PubMed
概括

氧化物 (β-Ga2O3) 功率装置的处理,通过等离子体辅助分子束表 (PA-MBE) 生长,显著抑制泄漏电流并增强故障电压. 这种方法可以实现有效的门电压工程,以提高设备性能.

关键词:
更多关于 MOSFET 的文章化等离子体中的.异质表皮性氧 (heteroepitaxy) 是一种表面处理 表面处理这就是β-Ga2O3的含量.

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