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Updated: Jan 7, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

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在InGaN量子井中,与Ag/AlN封顶相结合的等离子体被动化增强发光

David S Pate, Joshua N Blum, Iftikhar Ahmad

    Optics letters
    |December 24, 2025
    PubMed
    概括

    银/化 (Ag/AlN) 通过被动和等离子增强化 (InGaN) 多量子井 (MQW) 的效率. 这种组合通过减少重组和加强与Ag表面等离子体的合来显著增加光辐射.

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    Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
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