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Updated: Jan 7, 2026
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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
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设计和分析高k包装底层诱导的GaN多通道GAA纳米板FET的设计和分析,以提高在THz范围内切断频率的性能
Sneha Singh1, Rudra Sankar Dhar2, Amit Banerjee3
1Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Chaltlang, Aizawl, 79012, India.
Scientific reports
|December 24, 2025
概括
工程化 (GaN) 门周围纳米板场效应晶体管 (NS FET) 实现THz频率. 这些先进的GaN NS FET超越了未来无线系统的基准.
科学领域:
- 材料科学与工程 材料科学与工程
- 半导体设备物理 半导体设备物理
- 电气工程 电气工程
背景情况:
- 未来的无线系统需要先进的半导体设备来实现更高的频率和更高的性能.
- 化 (GaN) 提供优越的电子流动性和断裂电压,对于高频应用至关重要.
- 现有的场效应晶体管 (FET) 面临着下一代无线技术的扩展和性能限制.
研究的目的:
- 设计,探索和分析基于化 (GaN) 的多通道Gate-All-Around (GAA) 纳米片场效应晶体管 (NS FET).
- 评估设备对未来无线应用的潜力,包括射频前端模块和超越5G/6G系统.
- 优化设备几何和材料特性,用于超级尺度,高性能逻辑和THz频率模式中的RF应用.
主要方法:
- 设计和模拟一个多通道的GaN GAA NS FET,其中包含一个被高k介电隔离器包裹的2nm门底层.
- 使用制造的GaN FET进行校准,并通过分析门电压建模验证.
- 进行直流和射频表征,以评估设备性能指标,包括断电,开关比,下值摆动,DIBL和切断频率.
主要成果:
- 实现了非常低的关闭电流 (12 × 10−7 nA/μm) 和高的开关比率 (5.26 × 10−10).
- 已证明卓越的性能指标:下值波动为60.50mV/十年,DIBL为11.92mV/V,表现优于IRDS2028的基准.
- 显示出特殊的高频性能,切断频率达到8.16 THz,表明在THz模式下运行.
结论:
- 设计的GaN GAA NS FET显示了集成到未来射频前端模块和超越5G/6G无线系统的巨大潜力.
- 多通道架构提高了载体运输效率和扩展兼容性,提高了驱动电流并减少了泄漏.
- 由于材料创新和几何优化,该设备代表了后CMOS超级扩展,高性能逻辑和THz频段的射频应用的强有力的候选者.
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