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Updated: Jan 7, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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在MoS2/Ti接口的自发室温固态反应:接触工程的含义

Bazlul Karim1, Luka Pirker1, Jan Plšek1

  • 1J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic.

ACS applied nano materials
|December 25, 2025
PubMed
概括

直接将二硫化 (MoS2) 剥落到活性 (Ti) 上会导致降解. 更厚的MoS2层提供了更好的稳定性,表明了与反应性金属的工程接触的潜力.

关键词:
在MoS2的基础上,MoS2拉曼光谱法 拉曼光谱法在UHV脱皮过程中,这是XPSXPS.界面反应是界面反应.的是什么 的是什么

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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