通过缺陷被动化提高Ga2O3薄膜晶体管的性能,朝着太阳盲紫外线在传感器容器中的计算

Peng Li1, Jiajuan Shi1, Zhuangzhuang Li1

  • 1State Key Laboratory of Integrated Optoelectronics, Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, School of Physics, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China.

ACS nano
|December 25, 2025
PubMed
概括

这项研究增强了氧化 (Ga2O3) 薄膜晶体管 (TFT),使用回和Al2O3封装. 这显著提高了载体移动性和紫外线响应性,使先进的传感器和神经形态计算应用成为可能.