在芯片上的宽带频域近红外光谱系统
Siavash Yazdi1, Saba Mohammadi2, Shashikant Lahade3
1Department of EECS, University of California, Irvine, CA 92697 USA. He is now with NXP Semiconductors, Irvine, CA 92618.
概括
一个新的集成电路 (IC) 能够为频域近红外光谱 (fd-NIRS) 提供精确的增益和相位测量. 这一进步为可扩展,可穿戴的光学传感系统铺平了道路.
科学领域:
- 集成电路设计 集成电路设计
- 光学光谱学是指光学光谱学.
- 生物医学工程 生物医学工程
背景情况:
- 频域近红外光谱 (fd-NIRS) 对于非侵入性组织分析至关重要.
- 现有的fd-NIRS系统需要复杂的硬件来进行准确的增益和相位测量.
- 宽调制带宽对于高分辨率的fd-NIRS至关重要.
研究的目的:
- 在fd-NIRS.中设计和评估用于增强和相位测量的集成电路 (IC).
- 为了实现广泛的调制带宽,以提高fd-NIRS的性能.
- 促进可扩展和可穿戴fd-NIRS系统的开发.
主要方法:
- 开发了一种具有电压控制振荡器 (50 MHz1 GHz) 和基于N路径波器的相位探测器的IC.
- 将IC与激光二极管和雪崩光二极管 (APD) 集成为一个完整的fd-NIRS系统.
- 通过使用从105405MHz的调制频率来表征模拟组织的幻影.
主要成果:
- 该IC实现了对振幅和相位的精确模拟测量.
- 吸收和减少散射的光学属性的精度分别在0.00064毫米-1和0.054毫米-1范围内.
- 在更高的频率下,系统性能受到APD的限制.
结论:
- 设计的IC显著提升了fd-NIRS系统的能力.
- 开发的IC支持准确的光学属性测量.
- 这项工作为未来可穿戴和可扩展的光学传感技术提供了一个有希望的基础.
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