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排水和源工程对具有高K门堆设计的双金属InAs-GaSb VTFET的影响

M Saravanan¹, Eswaran Parthasarathy², Shiromani Balmukund Rahi³

¹Department of Electronics and Communication Engineering, Sri Eshwar College of Engineering, Coimbatore, 641202, India. saranecedgl@gmail.com.

Scientific reports

|December 29, 2025

概括

双金属InAs-GaSb垂直道场效应晶体管 (DM-InAs-GaSb VTFETs) 的性能使用HfO2和ZrO2门介电材料进行了优化. 这些材料显著提高了ON电流和传导率,提高了设备在高频应用中的性能.

科学领域:

半导体设备物理半导体设备物理
材料科学材料科学材料科学
纳米电子学纳米电子学

背景情况:

垂直道场效应晶体管 (VTFETs) 对低功耗电子产品具有前景.
优化门介电材料对于提高VTFET性能至关重要.
基于InAs的材料为先进的晶体管提供了独特的电子特性.

研究的目的:

为了研究各种门介电材料对双金属InAs-GaSb VTFETs性能的影响.
为了比较使用不同介电材料的DM-InAs-GaSb VTFET与现有的Ge-Si VTFET的性能.
评估优化的VTFET的频率响应和放大器功能.

主要方法:

模拟使用Silvaco技术计算机辅助设计 (TCAD) 软件进行.
该研究分析了VTFET用SiO2,Al2,O3,HfO2和ZrO2介电物的排水电流 (I_ON) 和转导率 (g_m).
使用SPICE模拟来评估与VTFET构建的常用源放大器的频率响应.

主要成果:

ZrO₂和HfO₂门介电材料表现出优异的性能,HfO₂显示出更高的I_ON (8.15 × 10-5 A/μm) 和g_{m (606 μS/μm).}
拟议的DM-InAs-GaSb VTFET与Ge-Si VTFET相比,I_ON增加了1.5倍,g_m增加了3倍.
基于HfO2的VTFET在放大器配置中实现了1.808GHz的切断频率,表明了出色的高频特征.

结论:

HfO₂和ZrO₂是提高DM-InAs-GaSb VTFET性能的高效门介电材料.
优化的VTFET显示了关键电气参数和频率响应的显著改进.
这些发现突显了基于INA的VTFETs与先进介电材料的潜力,用于未来的高性能电子应用.

关键词:

两极电流是两极流的在 GaSbb 中.网关氧化物网关氧化物 III-V 材料材料的使用.在AsAs中.TFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFETTFET 挖掘道是为了挖掘道.

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