在电磁辐射下的memristor合异质神经元网络中,发射动态和相位同步
Xiuquan Liu1, Dongpo Hu1, Ming Liu1,2
1School of Mathematical Sciences, Qufu Normal University, Qufu 273165, People's Republic of China.
Chaos (Woodbury, N.Y.)
|December 30, 2025
概括
这项研究探讨了电磁辐射和memristor合如何影响神经网络. 研究人员发现,这些因素可以控制神经元发射模式和复杂神经系统中的同步.
科学领域:
- 计算神经科学是一种神经科学.
- 非线性动力学是一种非线性动力学.
- 记忆器应用程序 应用程序
背景情况:
- 神经元发射活动是由电磁辐射和突触相互作用调节的.
- 记忆器为模拟复杂的神经动态和合机制提供了一种新的方法.
研究的目的:
- 为了研究在电磁辐射下对联于memristor的Chialvo-Rulkov神经元网络的发射动力学.
- 分析参数诱导的发射模式,多稳定性和同步现象.
主要方法:
- 利用分叉图,利亚普诺夫指数,光谱和C0复杂性来分析神经元动态.
- 使用离散的memristors模拟外部辐射和神经元之间的合.
- 使用PSIM软件为网络设计和模拟模拟电路.
主要成果:
- 观察到参数诱导的尖峰爆裂模式,根据合和辐射强度,具有不同的尖峰数量.
- 揭示了网络内的异质多元稳定性和共存的发射模式.
- 证明了神经元实现相位同步的能力.
结论:
- 电磁辐射和memristor合显著影响神经元发射模式和同步.
- 这项研究提供了关于异质神经系统中发射模式转换和同步的见解.
- 模拟电路实现验证了实际应用的理论发现.
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