磁性内存是由非相对论直线反铁磁磁体中旋转分裂扭矩驱动的
Yaqin Guo1,2,3, Aitian Chen4,5, Zhaozhuo Zeng6
1Songshan Lake Materials Laboratory, Dongguan, Guangdong, China.
Nature communications
|December 30, 2025
概括
变磁旋转分割扭矩 (SST) 能够在磁随机存储器 (MRAM) 设备中实现无磁场切换. 这一突破推进了完全电动,节能的MRAM应用程序,具有分开的写入和阅读通道.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 磁性随机访问存储器 (MRAM) 是由于其能源效率和速度而成为下一代领先的存储器技术.
- 反铁磁体中的旋转分裂带结构为控制旋转电流提供了新的方法.
- 变磁性为自旋电子设备的功能提供了独特的机会.
研究的目的:
- 通过使用变磁旋转分裂扭矩 (SST) 在磁道结 (MTJ) 中演示无磁场切换.
- 为了整合一个变磁 (101) -RuO2写入通道与一个MTJ为3终端设备.
- 探索变磁SST-MRAM在先进内存应用中的潜力.
主要方法:
- 整合一个 (101) -RuO2 变磁写字通道与一个垂直的-MTJ.
- 使用变磁旋转分割扭矩 (SST) 进行设备切换.
- 使用磁光克尔效应 (MOKE) 显微镜和磁性歇斯底里循环测量进行表征.
主要成果:
- 通过变磁性SST成功演示了垂直MTJ完全电动,无电场的切换.
- 倾斜旋转偏振和横旋旋转电流流的观测.
- 使用MOKE直接可视化无磁场的变磁SST驱动的磁域切换.
结论:
- 这项研究为开发变磁SST-MRAM提供了基础.
- 这项技术为纯电动,节能,耐用性高的MRAM铺平了道路.
- 用变磁器件可以实现分离的写入和阅读通道.
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