相关实验视频

Updated: Aug 4, 2026

Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells
15:08

Probing and Mapping Electrode Surfaces in Solid Oxide Fuel Cells

Published on: September 20, 2012

16.4K

通过半金属石墨烯边缘阴极的工作功能的调制进行场辐射控制

Cheul Hyun Yoon1, Jun Yeong Choe1, Yeong Jin Ahn1

  • 1Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea.

Small (Weinheim an der Bergstrasse, Germany)
|December 31, 2025
PubMed
概括

研究人员开发了一个石墨烯边缘发射器真空晶体管. 这种新型设备使用工作函数控制进行直流调制,为真空电子排放控制提供了一条新的途径.

关键词:
现场排放的现场排放.石墨烯阴极是使用石墨烯的.外通道门架构的门架构.真空晶体管的使用方法工作功能调制的工作功能调制.

更多相关视频

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K
Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.7K

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...