层厚度对SiO2/Si/SiO2/Si/SiO2电阻切换记忆堆层的结构,构成和电阻切换特性的影响
Alfredo Morales-Sánchez1, Karla E González-Flores1, Jesús M Germán-Martínez1
1Electronics Department, Instituto Nacional de Astrofísica, Óptica y Electrónica, Puebla 72840, Mexico.
Materials (Basel, Switzerland)
|December 31, 2025
概括
优化二氧化/多层 (SiO2/Si ML) 设计对于稳定的电阻开关 (RS) 设备至关重要. 较薄的层在回火后破坏了ML结构,导致设备性能不稳定和更高的电成形电压.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 电气工程 电气工程
背景情况:
- 电阻开关 (RS) 设备提供了有前途的非易失性内存解决方案.
- 优化SiO2/Si多层 (ML) 的材料结构是设备性能的关键.
研究的目的:
- 调查SiO2/Si ML中不同层厚度对热化 (TA) 后RS设备性能的影响.
主要方法:
- 制造具有不同Si厚度 (2,4,6nm) 的SiO2/Si ML.
- 在ML结构的热 (TA).
- 使用X射线光电子光谱 (XPS),拉曼光谱和传输电子显微镜 (TEM) 的表征.
- 电气测试RS设备性能,包括电成形 (EF) 电压和开/关比.
主要成果:
- 热导致不连续性,并在较薄的Si层中形成Si-纳米晶体 (ML-62,ML-64).
- 更厚的Si层 (ML-66) 保持了ML完整性和Si-纳米晶体大小.
- ML-66表现出稳定的RS行为,具有较低的EF电压 (-4V) 和高的ON/OFF比率 (10^7).
- 由于结构退化,ML-62在高EF电压 (-14V) 时表现出不稳定的行为.
结论:
- SiO2/Si ML的结构完整性对于稳定高效的RS设备运行至关重要.
- 精心控制Si层厚度和回火条件对于设计高性能RS设备至关重要.
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