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Updated: Jan 7, 2026

Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates
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Radio Frequency Magnetron Sputtering of GdBa2Cu3O7âˆ'ÃŽ ´/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 STO Single-crystal Substrates

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塔种子-缓冲层微结构及其对CoFeB/MgO层磁性和结构参数的影响

Jarosław Kanak1, Monika Cecot1, Witold Skowroński1

  • 1Institute of Electronics, AGH University of Krakow, Al. Mickiewicza 30, 30-059 Cracow, Poland.

Materials (Basel, Switzerland)
|December 31, 2025
PubMed
概括

的缓冲层厚度会影响/CoFeB/MgO多层的结构和磁性特性. 较厚的Ta缓冲器减少了接口粗性和磁性死层厚度,提高了膜质量.

关键词:
在X射线中,X射线的衍射效果是不同的.缓冲层是一种缓冲层.结晶化 结晶化的过程.死亡层是死亡层.磁道交叉点 磁道交叉点质地 质地 质地

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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