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通过可控降低Sn-Bi-Ag接器互连中的比斯穆特含量来提高电迁移寿命

Shengbo Wang¹, Shuai Meng¹, Houlin Liu¹

¹Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China.

Materials (Basel, Switzerland)

|December 31, 2025

概括

降低Sn-Bi-Ag接器互连中的石 (Bi) 含量可以显著提高电迁移 (EM) 寿命. 降低Bi度可以抑制原子流量,提高EM可靠性并延长互连寿命.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
可靠性物理学的可靠性

背景情况:

电子迁移 (EM) 是电子互连中关键的故障机制.
Sn-Bi-Ag合剂用于低温应用,但面临着EM挑战.
石 (Bi) 含量影响了Sn-Bi-Ag互连的电迁移行为.

研究的目的:

系统地调查不同Bi含量对Cu/Sn-xBi-1Ag/Cu互连的EM寿命的影响.
阐明Bi含量影响电磁诱导原子流和互连可靠性的机制.
为了确定Bi度和阳极Bi丰富层的厚化动力学之间的相关性.

主要方法:

制造Cu/Sn-xBi-1Ag/Cu连接器与不同Bi度 (x = 57,47,40重%) 的连接器.
系统的电迁移测试以确定互连寿命.
在阳极对原子迁移,相位分离和层增长动力学的分析.

主要成果:

较高的Bi含量导致偏好的Bi迁移,促进β-Sn/Bi相分离和阳极层加厚.
降低Bi含量通过降低移动Bi度,降低电阻率和增加扩散距离来抑制EM诱导的原子流量 (JEM).
随着Bi含量减少,EM寿命显著增加:62.3小时 (57Bi) 到164.9小时 (47Bi) 和414.1小时 (40Bi).

结论:

降低Bi含量是一种有效的策略,可以提高Sn-Bi-Ag接连接器的电迁移可靠性.
观察到的EM寿命的改善直接与抑制JEM和控制的阳极层生长有关.
这项研究为设计更强大的低温互连提供了有价值的见解.

关键词:

含有Bi的内容在Sn-Bi-Ag接器上使用Sn-Bi-Ag接.原子扩散流是原子扩散流.电迁移是一种电迁移.终身使用时间终身使用时间可靠性的可靠性

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