关于压力分布及其对SiO2基无机芯片填充差距可靠性的影响的研究
Ziyang Ding1, Shaowei Liu1, Chen Lin2
1School of Integrated Circuits, Southeast University, Wuxi 214000, China.
Micromachines
|December 31, 2025
概括
用二氧化填充无机空隙提高了片片集成的可靠性. 这项研究量化了其机械性能,并模拟了热力学应力,解决了2.5D和3D包装中的裂纹风险.
科学领域:
- 材料科学 材料科学 材料科学
- 机械工程 机械工程
- 半导体制造业 半导体制造业
背景情况:
- 使用二氧化 (SiO2) 通过等离子增强化学蒸汽沉积 (PECVD) 填充无机空隙对于2.5D和3D片段集成至关重要,为环氧模具复合物 (EMC) 提供了替代方案.
- 由于SiO2填充剂的无机性质,它们存在可靠性挑战,包括裂和剥离.
- 缺少SiO2填充剂中微尺度机械性能,热应力和断裂风险的定量表征和建模.
研究的目的:
- 开发一条全面的路线,用于对无机空隙填充剂的机械行为的定量表征.
- 建立一个有限元法 (FEM) 模型来预测空隙填充过程的热力学可靠性.
- 调查填料厚度对应力分布和骨折风险的影响.
主要方法:
- 微尺度机械表征的组合纳米沉积和三点曲试验.
- 有限元法 (FEM) 建模模拟热力学应力并预测骨折风险.
- 拉曼光谱用于FEM模型的实验验证.
主要成果:
- 建立了一种用于SiO2填充剂定量微尺度机械表征的新方法.
- 使用拉曼光谱学开发和验证了一种FEM模型,证明了热力学可靠性的可靠预测能力.
- 该研究揭示了填充剂厚度对空隙填充结构内的应力分布的显著影响.
结论:
- 开发的微量表征和FEM建模方法克服了先进包装中无机空隙填充传统方法的局限性.
- 这项研究为高密度2.5D/3D芯片集成的过程优化和结构设计提供了关键的支持.
- 这些发现增强了对无机填充过程可靠性的理解,这对于异质集成技术的进步至关重要.
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