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相关概念视频

Equivalent Capacitance01:19

Equivalent Capacitance

2.0K
Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
2.0K
Equivalent Capacitance01:19

Equivalent Capacitance

637
From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
637
Mesh Analysis for AC Circuits01:12

Mesh Analysis for AC Circuits

645
In the domain of radio communication, the significance of impedance matching must be considered. It is crucial to ensure the efficient transmission of signals between radio transmitters and receivers. Achieving this balance involves using impedance-matching circuits, with one fundamental configuration comprising a resistor, capacitor, and inductor.
The process of harmonizing these impedances begins with a clear understanding of the input and output signals. Once these signals are known, the...
645
Linear Approximation in Frequency Domain01:26

Linear Approximation in Frequency Domain

329
Linear systems are characterized by two main properties: superposition and homogeneity. Superposition allows the response to multiple inputs to be the sum of the responses to each individual input. Homogeneity ensures that scaling an input by a scalar results in the response being scaled by the same scalar.
In contrast, nonlinear systems do not inherently possess these properties. However, for small deviations around an operating point, a nonlinear system can often be approximated as linear....
329
MOS Capacitor01:25

MOS Capacitor

1.4K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.4K
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

1.4K
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
1.4K

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相关实验视频

Updated: Jan 7, 2026

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

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基于安杰洛夫模型的GaN HEMTs改进的非线性电容模型.

Yuchen Miao1,2, Qingyu Yuan3, Chuangye Wang1,2

  • 1School of Electronic Engineering, Jiangsu Ocean University, Lianyungang 222005, China.

Micromachines
|December 31, 2025
PubMed
概括

本研究介绍了化高电子移动性晶体管 (GaN HEMT) 的改进的非线性电容模型. 改进的模型准确地描述了内在电容,在实验验证中表现优于传统的安吉洛夫模型.

关键词:
安杰洛夫的模拟模式内在容量的内在容量.非线性电容容量的非线性电容.参数提取 参数提取小信号等效电路的电路.

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科学领域:

  • 半导体设备物理学的物理
  • 材料科学是一种材料科学.

背景情况:

  • 化高电子移动性晶体管 (GaN HEMT) 对于高频应用至关重要.
  • 对内在电容的准确建模对于电路设计至关重要.
  • 传统的安杰洛夫模型提供了一个基础,但需要对GaN HEMTs进行改进.

研究的目的:

  • 为GaN HEMTs开发和验证一个改进的非线性电容模型.
  • 增强GaN HEMT中内在电容量的定量表征.
  • 支持用于高频电路设计的准确设备建模.

主要方法:

  • 使用UMS GH15-10工艺制造的GaN HEMT的制造.
  • 从实验数据中提取内在电容参数.
  • 传统Angelov模型与使用R2和RMSE指标的提议改进模型的比较.

主要成果:

  • 改进的非线性电容模型与实验数据的一致性明显更高.
  • 与传统的Angelov模型相比,增强型号显示出更高的性能.
  • 对GaN HEMT非线性电容的定量表征得到了更高的准确性.

结论:

  • 提议的改进模型更适合准确地建模GaN HEMT的非线性内在电容.
  • 这项研究为高频电路应用提供了更精确的设备建模.
  • 验证的模型有助于设计和优化基于GaN HEMT的电路.