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Updated: Jan 7, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

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Published on: November 1, 2013

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具有异构电介质的InGaAs/GaAsSb异构连接无兴奋剂道FET的性能分析和优化

JunJie Huang1, HongXia Liu1, Shupeng Chen1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|December 31, 2025
PubMed
概括

一个新的无兴奋剂道FET使用InGaAs/GaAsSb异质连接和异质介电器,以提高低功耗性能. 这种设计实现了高启动电流和的切换,非常适合先进的电子设备.

关键词:
电流和射频的直流和射频.在InGaAs/GaAsSb异质连接处.带对带的道化道.没有使用兴奋剂的TFET.不同类型的介电器.

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