一种Si/SiC异质连接双槽MOSFET,具有改进的导电特性
Yi Kang1, Dong Liu1,2, Tianci Li1
1School of Electrical Engineering, Southwest Jiaotong University, Chengdu 611756, China.
Micromachines
|December 31, 2025
概括
一种新的/碳化物 (Si/SiC) 异质连接 MOSFET 通过改善前向和反向传导来增强功率电子. 这种Si/SiC装置可降低开启电阻和开启电压,提高效率和可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 传统的碳化 (SiC) 设备面临着寄生元素和导电损失的挑战.
- 提高高压电源设备的前向和反向传导对于效率和可靠性至关重要.
研究的目的:
- 提出和分析具有增强导电特性的Si/SiC异质连接双沟金属氧化物半导体场效应晶体管 (MOSFET).
- 研究Si/SiC异质连接和高k介电对设备性能的影响.
主要方法:
- 利用技术计算机辅助设计 (TCAD) 模拟来建模和评估拟议的Si/SiC异质连接MOSFET.
- 包含一个高k门介电和一个双沟结构,以优化性能.
主要成果:
- 与传统的SiC DTMOS相比,实现了1.78 mΩ·cm2的特定电阻 (R_on,sp),减少了20.5%.
- 降低了第三象限的开启电压 (V_on) 从2.74V降至1.53V,抑制了双极退化.
- 保持了大约1380V的可比故障电压 (BV).
结论:
- 拟议的Si/SiC异质连接MOSFET有效地改善了前向和反向导电特性.
- 该设备的设计减轻了寄生性PiN二极管效应,并增强了单极导电,为高压功率电子提供了有前途的解决方案.
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