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对高压GaN-on-Sapphire单立式电源集成电路的隔离方法的调查

Sheng Li¹, Haiwei Zhang¹, Yanfeng Ma¹

¹School of Integrated Circuit, Southeast University, Nanjing 210096, China.

|December 31, 2025

概括

在蓝宝石基板上的化 (GaN) 为电力电路提供更高的额定电压. 离子植入有效地隔离设备,但浅沟隔离通过减轻交叉通话进一步提高了稳定性.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
电气工程电气工程

背景情况:

绝缘蓝宝石基板上的化 (GaN) 能够为单体电源集成电路 (MPIC) 与基板相比提供更高的额定电压.
研究隔离技术对于优化GaN-on-Sapphire MPIC的性能和稳定性至关重要.

研究的目的:

评估GaN-on-Sapphire MPIC中隔离方法的有效性,重点关注基质偏差和交叉效应.
分析离子植入和浅沟隔离对设备性能和稳定性的影响.

主要方法:

制造具有离子植入隔离的GaN-on-Sapphire MPIC. 离子植入隔离的制造.
分析相邻的高侧和低侧功率装置之间的基板偏差和交叉声效应.
实施和评估浅沟隔离 (STI) 以减轻交叉通话.

主要成果:

离子植入有效地抑制了基板偏差和电源设备之间的交叉声,无论基板终结如何.
离子植入隔离了相邻的高压和低压设备,尽管由于电容合而观察到轻微的交叉声 (高达3%的降解).
植入区域内的浅沟隔离显著减轻了高压和低压设备之间的交叉通话.

结论:

离子植入是GaN-on-Sapphire MPICs的一种可行的隔离方法,可以减少寄生效应.
建议进行浅沟隔离,以进一步提高集成逻辑电路和驱动器在高压切换期间的稳定性.

关键词:

在 GaN 电源设备上.交叉语音交叉语音交叉语音交叉语音交叉语音这是一个半桥电路.隔离隔离隔离隔离隔离一个单一的电力集成系统.基质偏差是一种偏差.

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