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在3D集成设备中的金属接触蚀刻过程优化.

¹School of Integrative Engineering, Chung-Ang University, 84, Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea.

|December 31, 2025

概括

本研究介绍了一种新的三步金属接触蚀刻工艺,用于3D集成电路. 改进的方法防止化物穿透,确保稳定的超接触蚀刻和可靠的性能.

科学领域:

材料科学与工程材料科学与工程
半导体设备制造业半导体设备制造业
纳米技术纳米技术

背景情况:

传统的金属接触蚀刻面临着薄膜堆配置和超接触蚀刻的挑战.
评估单个参数只能为物理配置文件和电气性能之间的复杂相互作用提供有限的洞察力.

研究的目的:

综合检查金属接触蚀刻和3D集成超级接触的物理形状特征.
为先进的3D集成逻辑应用开发稳定可靠的超接触蚀刻方法.

主要方法:

研究了一种新的金属接触蚀刻工艺,专注于薄膜堆配置.
实施了三步蚀刻序列,并进行了高选择性超蚀刻,以改善停止边际.
在各种条件下评估的止损保证金,包括基线和高选择性场景.

主要成果:

最初的评估显示,在常规条件下,化物可以穿透.
三步蚀刻序列成功地解决了化物穿孔问题.
实现了强大的工艺窗口,有利的临界维度 (CD) 控制和可靠的化物停止性能.

结论:

开发的三步蚀刻序列为稳定的超接触蚀刻提供了一个实用的方法.

关键词:

3D整合 3D整合联系蚀刻器接触蚀刻器金属-1接触方式超接触式超接触式

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这种方法适用于先进的3D集成逻辑应用.

该研究强调了多步骤方法对优化复杂片堆中蚀刻过程的重要性.