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负载卸载压力对p-GaN HEMT在浮式门条件下的影响

Zhipeng Shen^1,2, Yijun Shi², Lijuan Wu¹

¹School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China.

|December 31, 2025

概括

以较小的负载卸载应力预先调节p-GaN HEMT,可以提高它们对随后更大的应力的弹性. 由于电容合和朱尔加热,直接的高压卸载事件会导致设备燃烧.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

化 (GaN) 高电子流动性晶体管 (HEMT) 对功率电子非常重要.
负载卸载应激是汽车和工业动力系统中常见的短暂事件.
在压力下了解p-GaN HEMT的故障机制对于可靠性至关重要.

研究的目的:

为了研究负载卸载应力对p-GaN HEMTs的影响.
为了确定p-GaN HEMT在负载卸载条件下的故障值和机制.
探索提高p-GaN HEMT对短暂电压事件的强度的方法.

主要方法:

对p-GaN HEMTs进行受控负载-卸载应力 (变压,持续时间,上升时间) 的实验应用.
分析不同压力级别下的设备行为和故障模式.
在压力事件期间调查电荷积累和电流流动力学.

主要成果:

以较低电压的负载卸载应力 (150V) 进行预调,可显著提高设备对较高应力 (190V) 的耐受性.
直接应用高负载-卸载应力 (≥160 V) 会导致设备燃烧.
燃烧归因于电容合,短暂的正电荷积累,通道增强和随后的朱尔加热.

结论:

一个特定的预条件化策略可以提高p-GaN HEMT在负载倾倒压力下的可靠性.
该研究定义了p-GaN HEMTs中负载卸载故障的临界电压值.
这些发现支持在实际应用中设计保护措施,以防止设备损坏.

关键词:

电容合电流的电容合电流.漂浮门是漂浮的门.负载 - 卸载应力压力在p-GaN HEMT 短暂的电荷是暂时的.

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