基于Q增强口波器的UWB干扰拒绝LNA的设计
Jiaxuan Li1, Yuxin Fan1, Fan Meng1
1Nanjing Research Institute of Electronics Technology, Nanjing 210039, China.
Micromachines
|December 31, 2025
概括
一个新的Q增强的隙过器改进了干扰排斥低噪声放大器 (LNA). 这种活性电容过器有效地抑制IEEE 802.11a干扰,对所需信号的影响最小.
科学领域:
- 电气工程 电气工程
- 微波工程 微波工程
- 半导体设备 半导体设备
背景情况:
- 低噪音放大器 (LNA) 在无线通信系统中至关重要.
- 邻近频段的干扰,例如IEEE 802.11a,会降低LNA的性能.
- 现有的口过器经常受到低质量因素 (Q) 和插入损失的影响.
研究的目的:
- 提出和验证一个Q增强的隙过器,以有效拒绝LNA中的干扰.
- 通过使用活性电容和负电阻来提高口过器的质量因子.
- 将口过器集成到超宽带LNA中,并评估其性能.
主要方法:
- 设计了一种Q增强的口过器,利用活性电容来产生负电阻效应.
- 使用0.15微米化 (GaAs) 伪形现场效应晶体管 (pHEMT) 工艺制造了一个3-15 GHz超宽带LNA.
- 在LNA阶段之间集成了口过器,并使用了基于频率的反循环来实现宽带匹配.
主要成果:
- 隙过器显示IEEE 802.11a干扰抑制的狭窄衰减带宽 (5.75-5.95 GHz).
- 制造的LNA实现了24.5dB的最大增益和1.8dB的最小噪声值.
- 在5.8GHz时达到35.2dB的最大干扰拒绝比,对LNA增益的影响微不足道.
结论:
- 拟议的Q增强型隙过器有效地拒绝干扰,同时保持LNA性能.
- 在GaAs的pHEMT实现中,在实际过程中验证了过器的可行性和性能.
- 这项技术提供了一种可行的解决方案,用于在拥挤的无线环境中提高LNA的稳定性.
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