将温度对热载体降解的影响纳入紧物理模型
Stanislav Tyaginov1, Erik Bury1, Alexander Grill1
1IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
Micromachines
|December 31, 2025
概括
这项研究增强了一个紧的物理模型,包括环境温度对晶体管中的热载体降解 (HCD) 的影响. 改进的模型准确地预测了在广泛的温度范围内降解的情况.
科学领域:
- 半导体设备物理学 半导体设备物理
- 材料科学是一种材料科学.
背景情况:
- 热载体降解 (HCD) 是先进的半导体设备的关键可靠性问题.
- 现有的紧物理模型 (CPM) 往往缺乏全面的温度依赖HCD分析.
研究的目的:
- 扩展现有的紧物理模型 (CPM),以准确纳入环境温度对热载体降解 (HCD) 的影响.
- 调查温度影响HCD的竞争机制.
主要方法:
- 嵌入温度依赖的载体传输,热Si-H键破裂和键振动寿命到CPM中.
- 验证了扩展的CPM与28nmn通道晶体管的实验数据.
- 在150-300K的温度范围和各种电压条件中利用实验数据.
主要成果:
- 扩展的CPM成功地解释了环境温度对HCD的影响.
- 在测试温度范围内证明了正常化的线性排水电流降解 (ΔId,lin(t)) 痕迹的准确预测.
- 确定,虽然一些温度影响阻碍了HCD,但热键破裂加速了它.
结论:
- 开发的扩展CPM提供了一个强大的工具,用于在不同温度下预测半导体设备中的HCD.
- 该模型增强了对温度在设备退化中的复杂作用的理解.
- 准确的温度效应建模对于确保半导体设备的长期可靠性至关重要.
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