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在₂O₃中:用于薄膜晶体管的氧化物半导体,简要回顾

Christophe Avis¹, Jin Jang¹

¹Department of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul 02447, Republic of Korea.

Molecules (Basel, Switzerland)

|December 31, 2025

概括

多晶体氧化物 (In2O3) 薄膜晶体管 (TFT) 提供超过100cm2/Vs的高流动性,使先进电子产品的缩放设备成为可能. 本综述探讨了In2O3材料特性,TFT特性以及用于神经形态和3D应用的集成.

科学领域:

材料科学材料科学材料科学
电子工程电子工程
半导体物理半导体物理

背景情况:

无形氧化物半导体彻底改变了电子产品,氧化物 (IGZO) 在柔性基板上实现了~10 cm2/Vs的移动性.
实现超过30cm2/Vs的移动性对IGZO来说是个挑战,这促使研究替代材料.
多晶氧化 (In2O3) 已成为一个有前途的材料,表现出明显更高的流动性.

研究的目的:

提供对多晶In2O3材料特性及其对薄膜晶体管 (TFT) 的影响的全面审查.
详细介绍 In2O3 TFT 的特性,制造工艺和设备工程策略.
突出最近的突破和In2O3 TFT在神经形态计算和3D集成中的潜在应用.

主要方法:

材料属性的审查,包括带隙,电荷中性水平 (CNL),兴奋剂效应,光学属性,有效质量和移动性.
对TFT参数的分析,如场效应移动性,下值波动和在各种应力条件下的稳定性 (BTS,NBIS).
探索制造技术 (真空和非真空) 和设备工程方法 (被动化,门绝缘器,双门,2DEG).

主要成果:

在2O3中,TFT实现了超过100cm2/Vs的高流动性,适用于缩放到10nm通道长度的设备.
用Zr,Ge,Mo,Ti,Sn或H等元素进行兴奋剂会影响载体的度和移动性.
先进的设备工程和兴奋剂策略,包括和化物,进一步提高性能和稳定性.

结论:

多晶In2O3是高性能TFT的IGZO的优质替代品,提供了卓越的移动性和可扩展性.
In2O3 TFT 非常适合用于要求高的应用程序,如后端 (BEOL) 集成,神经形态系统和3D电路.
对材料优化和设备工程的持续研究有望在基于In2O3的电子产品中取得进一步的进步.

关键词:

3D整合 3D整合这就是ALD.这就是IGO IGO.这就是ITO ITO ITO.在2O3中.兴奋剂的使用兴奋剂的使用通过神经形态应用程序.喷雾式热解的方法薄膜晶体管的使用方法

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