Metal-Semiconductor Junctions
Biasing of Metal-Semiconductor Junctions
MOS Capacitor
MOSFET: Enhancement Mode
Potentiometry: Membrane Electrodes
Controlled-Potential Coulometry: Electrolytic Methods
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Huihan Li1, Haozhe Jin2, Ze Hua3
1Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, People's Republic of China.
这项研究引入了使用VS2纳米片的稳定离子调节型记忆器. 它通过一种新的晶体固体溶液工艺来抑制结构降解来实现精确的可逆导电度调整.
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