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Updated: Jan 7, 2026

Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping
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Published on: July 2, 2012

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可转移的等离子阵列允许在活性二极管架构中与分层矿进行强合

Fabien Dorey1, Jonas D Ziegler1, Antti J Moilanen1,2

  • 1Photonics Laboratory, ETH Zürich, CH-8093 Zürich, Switzerland.

Nano letters
|December 31, 2025
PubMed
概括

这项研究表明,二维矿和六角化 (hBN) 上的等离子体腔之间存在强烈的合. 这种集成可以实现高效的光物质相互作用和芯片上的光子装置潜力.

关键词:
两维材料是二维材料.发光器件是发光的设备.极光子是什么意思 极光子是什么意思强大的合器.表面格子共振的表面格子共振.佩洛夫斯基特石是如何形成的

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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters10:54

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Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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