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Updated: May 13, 2026

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点缺陷及其动态行为在石墨烯和SiC之间间隔的银单层中

Van Dong Pham1, Arpit Jain2, Chengye Dong2,3,4

  • 1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5-7, 10117 Berlin, Germany.

Nano letters
|December 31, 2025
PubMed
概括

2D银单层中的原子缺陷表现出动态切换行为. 这些缺陷可以通过显微镜尖端控制,作为纳米电子应用的原子尺度开关.

关键词:
缺陷开关的缺陷开关是指缺陷开关.石墨烯/SiC 接口接口点缺陷是指点缺陷的缺陷.扫描道显微镜扫描道显微镜银单层的一层.

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