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Updated: Jan 7, 2026

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纳米反应器结构缺陷的MoS₂:抑制离子电池的间隙诱导相位过渡和增强可逆性

Chunrong Ma¹, Cyrus Koroni², Jiacheng Hu²

¹School of Mechanical and Electrical Engineering, Qingdao University, Qingdao, 266071, People's Republic of China.

Nano-micro letters

|January 4, 2026

概括

No abstract available in PubMed .

关键词:

缺陷工程间隔的异构结构阶段过渡离子电池结构可逆性

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相关概念视频

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...