用于发光二极管的可扩展制造和精确模式
Shuaiqi Liu1, Hao Jiang1, Jizhuang Wang2
1Smart Manufacturing Thrust, The Hong Kong University of Science and Technology (Guangzhou), Systems Hub, Guangzhou, 511458, People's Republic of China.
Nano-micro letters
|January 4, 2026
概括
No abstract available in PubMed .
相关概念视频
01:19Modeling of Diode Forward Characteristics
Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
01:14Modeling of Diode Reverse Characteristics
In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...