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接口工程抑制电化纳米粒铜的自化,用于低温铜与铜的结合

Gangqiang Peng1, Xinyi Dong1,2, Binzhao Li3

  • 1Department of Systems Engineering, City University of Hong Kong, Kowloon, Hong Kong, China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|January 5, 2026
PubMed
概括

No abstract available in PubMed .

关键词:
直接结合先进的电子包装低温粘合方式纳米颗粒 Cu

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Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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