相关实验视频

Updated: Jan 7, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

10.0K

集成批量表面工程稳定了MA无宽带间隙矿用于并列光伏

Yu Tong1,2, Biao Li2, Youming Zhu2

  • 1Institute of Functional Nano & Soft Materials, Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, P. R. China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|January 5, 2026
PubMed
概括

No abstract available in PubMed .

关键词:
大量表面分子合效应缺陷被动化化物分离双联太阳能宽带间隙矿

更多相关视频

Flash Infrared Annealing for Perovskite Solar Cell Processing
05:15

Flash Infrared Annealing for Perovskite Solar Cell Processing

Published on: February 3, 2021

8.5K
In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation
06:49

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation

Published on: March 2, 2021

6.6K

相关实验视频

Last Updated: Jan 7, 2026

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

10.0K
Flash Infrared Annealing for Perovskite Solar Cell Processing
05:15

Flash Infrared Annealing for Perovskite Solar Cell Processing

Published on: February 3, 2021

8.5K
In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation
06:49

In situ Grazing Incidence Small Angle X-ray Scattering on Roll-To-Roll Coating of Organic Solar Cells with Laboratory X-ray Instrumentation

Published on: March 2, 2021

6.6K

相关概念视频

P-N junction01:11

P-N junction

1.1K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.1K
JoVE
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策
Jove
Visualize
联系我们