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电池类型金属硫化物的MXene诱导伪容量转化:高速存的范式

Panji Xu1, Yubing Li1, Shuaikai Xu1,2

  • 1Center on Nanoenergy Research, School of Physics Science and Technology, Guangxi University, Nanning, P. R. China.

Small (Weinheim an der Bergstrasse, Germany)
|January 5, 2026
PubMed
概括

No abstract available in PubMed .

关键词:
0D/2D异构结构支持MXene的电容增强接口电子合器层间封闭伪容量转换

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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