工程负电容度为Hf0.5Zr0.5O2,用于低功率和可靠的充电陷闪存
Yunseok Nam1, Sangho Lee1, Yangjin Jung1
1School of Electrical Engineering, Korea Advanced Institute of Science & Technology, Daejeon 34141, Republic of Korea.
ACS applied materials & interfaces
|January 6, 2026
概括
设计的负电容电荷陷闪存 (NC-CTF) 存储器使用Hf0.5Zr0.5O2层与中间层来提高效率. 这一创新使低压操作成为可能,并提高了高密度非挥发性内存应用的可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体设备 半导体设备
背景情况:
- 充电陷闪存 (CTF) 存储器对于高密度非挥发性存储器至关重要.
- 在CTF内存中的高工作电压会导致干扰和介电故障等可靠性问题,阻碍3D缩放.
研究的目的:
- 开发一个负电容电荷陷闪存 (NC-CTF) 存储器,提高效率和可靠性.
- 通过电容提升实现低压程序/删除 (PGM/ERS) 操作.
主要方法:
- 通过结合介电介层 (IL) 来设计Hf0.5Zr0.5O2 (HZO) 层,以加强负电容 (NC) 效应.
- 利用AlN作为IL材料和HZO的超晶格沉积过程来增强铁电和氧气空隙形成.
- 将工程NC层嵌入到CTF装置的阻断氧化物 (BO) 中.
主要成果:
- 通过工程HZO层的NC诱导电容增强效应实现了显著的运行效率.
- 通过调节HZO域配置和增强脱极化能量,证明了低压PGM/ERS操作.
- 提高了HZO厚度减半的铁电性,并解决了可靠性问题,包括细胞间干扰和介电分解.
结论:
- 设计的NC-CTF内存为下一代非易失性内存提供了一个有前途的解决方案.
- 效率和可靠性的协同改进为实际实施铺平了道路.
- 低压操作和增强耐用性是高密度内存扩展的关键好处.
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