相关实验视频

Updated: Jan 13, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.7K

接触电气化的层间电荷转移在导电微型和纳米级薄膜异构结构中

Sandeep Kumar1, Ravindra G Bhardwaj2

  • 1Independent researcher, Kurukshetra, Kurukshetra, 136118, INDIA.

Journal of physics. Condensed matter : an Institute of Physics journal
|January 6, 2026
PubMed
概括

接触电气化驱动器在材料中进行电荷转移,改变它们的性质. 这篇评论探讨了薄膜中的柔电诱导效应,揭示了新的物理行为,如旋转霍尔效应.

关键词:
接触电气化的电气化柔电效应是一种柔电效应.层间的电荷转移是层间的.

更多相关视频

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials04:57

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

966

相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
898