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Updated: Jan 13, 2026

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基于In2Se3-石墨烯vdW铁电异质连接的场效应晶体管,用于高性能和低功耗逻辑应用

Miao-Wei Zhao1, Jian-Qing Dai1, Jin Yuan1

  • 1Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China. djqkust@kust.edu.cn.

Physical chemistry chemical physics : PCCP
|January 6, 2026
PubMed
概括

本研究介绍了一种使用In2Se3/石墨烯用于先进逻辑设备的新型2D铁电异联FET (FeHJ-FET). 它展示了用于高性能,低功耗应用的非挥发性调制,突破性能极限.

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