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在单层MoS2纳米泡中的变压修饰的拉曼反应在5nm分辨率下得到解决

Sayantan Mahapatra1, Soumyajit Rajak2, Sukriti Manna1,3

  • 1Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois 60439, United States.

The journal of physical chemistry letters
|January 7, 2026
PubMed
概括

像MoS2这样的二维材料中的纳米级泡会诱导应变梯度,影响光电子特性. 这项研究使用尖端增强拉曼光谱绘制了MoS2纳米泡中的应变分布图,揭示了对设备应用至关重要的边缘应变.

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