使用STEM,EELS和电子图解学在单层hBN中制造和表征终结四度空隙

Dana O Byrne1, Stephanie M Ribet2, Demie Kepaptsoglou3

  • 1Department of Chemistry, University of California, Berkeley, CA, 94720, USA; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.

Ultramicroscopy
|January 7, 2026
PubMed
概括

研究人员使用电子辐射在六角化 (hBN) 中精确制造了终结的四度空隙. 这些缺陷会产生具有可调节的静电潜力的纳米孔,用于先进的应用.