狄拉克半金属的磁导性和基尔迪什技术的奇拉磁效应
Ruslan Abramchuk1, M A Zubkov2
1Physics Department, Ariel University, Kiryat haMada, Ariel, 4070000, ISRAEL.
概括
证实迪拉克半金属中的负磁阻源于性磁力效应 (CME). 本研究使用非平衡理论直接计算轴向电荷密度和导电性,验证在强磁场下CME假设.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 理论物理 理论物理
背景情况:
- 迪拉克半金属中的负磁电阻通常归因于奇拉磁效应 (CME).
- 负磁阻和CME之间的直接联系在很大程度上是假设性的,依赖于假设.
研究的目的:
- 严格调查迪拉克半金属中轴电荷积累和负磁阻之间的关系.
- 为了证实这种假设,即性磁力效应是这些材料中磁导的起源.
主要方法:
- 从非平衡的格林函数理论中利用了凯尔迪什技术.
- 计算了轴电荷密度和电导率,考虑了杂质散射和声子相互作用.
- 专注于强磁场的强磁场模式.
主要成果:
- 根据启发式CME模型预测的轴电荷密度和电流的相同场依赖性.
- 直接计算的磁导和轴电荷密度,提供了定量链接.
结论:
- 这项研究证实了将迪拉克半金属中的负磁阻与性磁力效应 (CME) 联系在一起的假设.
- 这些发现验证了CME作为强磁场极限中磁导的基本机制.
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