基于Hf/Zr超晶格的高k门介电材料与双极层工程,用于高级CMOS
Taeyoung Song1, Sanghyun Kang1,2, Yu-Hsin Kuo1
1School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
ACS nano
|January 8, 2026
概括
新的基于Hf/Zr的网关堆实现了亚纳米相当氧化物厚度 (EOT),并使多门电压 (Vth) 设计成为可能. 这些先进的门介电器与高温处理兼容,并为未来的逻辑扩展保持高设备可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体设备物理 半导体设备物理
- 纳米技术 纳米技术
背景情况:
- 先进的逻辑晶体管需要门介电材料,具有亚纳米相当的氧化物厚度 (EOT),抑制泄漏,并与高温处理兼容.
- 传统的高κ介电系统在同时满足EOT扩展,多门电压 (Vth) 调整性和高设备可靠性要求方面面临挑战.
- 实现这些严格的要求对于半导体设备在1纳米边界之外的持续扩展至关重要.
研究的目的:
- 展示基于Hf/Zr的网关堆,满足高级逻辑晶体管的关键要求,包括亚纳米EOT,泄漏抑制和工艺兼容性.
- 研究将Al2O3双极嵌入Hf/Zr多层中对值电压 (Vth) 调性和等效氧化物厚度 (EOT) 的影响.
- 为了评估新型门介电堆在应力条件下的设备可靠性和稳定性.
主要方法:
- 基于Hf/Zr的超格网门堆的制造和表征,包括HZH和HZHA (嵌入Al2O3双极).
- 高温回火 (700°C N2) 以评估热稳定性和EOT.
- 电气特性测量泄漏电流,等效氧化物厚度 (EOT),平带电压 (VFB) 转移和值电压 (Vth) 调整性.
- 使用负偏差温度应力 (NBTS) 在125°C的可靠性测试.
主要成果:
- 在700°C的火后,HZH超级网实现了7.3 Å的EOT,在保持相似的泄漏率的同时,超过了传统的HfO2-only堆 (8.5 Å).
- HZHA堆显示了8.4 Å EOT和>200 mV VFB转移,使多Vth调节能够在不影响扩展的情况下实现,超过了标准HfO2/Al2O3堆 (9.0 Å EOT).
- 在NBTS下,HZHA和HA堆显示了可比的VFB漂移 (分别为87mV和97mV),证实了设备的高可靠性,以及Vth调性和低EOT.
结论:
- 基于Hf/Zr的网关堆,特别是HZHA,从数量上满足高级逻辑晶体管的关键要求,包括亚纳米EOT,RMG兼容处理和Vth可调性.
- 这项研究提供了对超薄Hf/Zr多层中双极行为和界面扩散的新物理见解,促进了对介电缩放的理解.
- HZHA代表了一个有前途的介电平台,用于支持超越1纳米节点的逻辑扩展,为下一代高性能晶体管提供了一条途径.
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