远程等离子选择性蚀启用可调节的子终端工艺,用于在门周围纳米板场效应晶体管中改进寄生底通道控制
Jiayang Li1, Yuan Gao2, David Wei Zhang3
1College of Integrated Circuits, Micro-Nano Electronics, Fudan University, Shanghai 200433, China.
Nanomaterials (Basel, Switzerland)
|January 9, 2026
概括
研究人员为纳米板FET开发了一种Sub-Fin编辑技术. 这项创新优化了Sub-Fin配置文件,以提高耐热性和减少降解,改善低功耗和高性能应用的性能.
科学领域:
- 半导体设备物理学 半导体设备物理
- 先进的材料科学是先进的材料科学.
背景情况:
- 纳米板场效应晶体管 (NS-FETs) 中的寄生性子终端构成了一个重要的瓶,限制了泄漏电流和散热.
- 这种寄生元素阻碍了NS-FETs的整体性能提升.
研究的目的:
- 引入一种新的Sub-Fin编辑技术来调节NS-FET中的Sub-Fin形成.
- 在先进的晶体管架构中解决Sub-Fin降解和热管理之间的权衡.
主要方法:
- 开发一个使用远程等离子蚀刻的Sub-Fin编辑技术.
- 通过调整工艺参数,控制地调制子形状的配置文件,从"箭头形状"过渡到"钟形状".
主要成果:
- 证明了次级金融配置文件的连续调制.
- 通过采用"钟形"的轮,实现了更好的耐热性.
- 减少了寄生虫子细诱导的降解,具有"箭头形状"的配置.
结论:
- 拟议的Sub-Fin编辑技术为优化NS-FET用于特定应用提供了灵活性.
- 这项技术与Gate-All-Around (GAA) 制造工艺兼容.
- 提供了一个可行的方法来平衡NS-FET中的装置降解和散热.
相关概念视频
01:17Characteristics of MOSFET
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
01:22MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...