ALD驱动的超薄IGZO神经形晶体管具有缺陷工程1/f噪声,用于稳定的多模式信息加密
Jiawei Yang1, Bingyan Wang1, Bo He1
1School of Materials Science and Engineering, Anhui University, Hefei 230601, China.
The journal of physical chemistry letters
|January 9, 2026
概括
使用--氧化物 (IGZO) 通道的超薄神经形晶体管是用原子层沉积 (ALD) 制造的. 这些稳定,灵活的设备可以通过音频数字标签和图像加密来安全隐藏信息.
科学领域:
- 材料科学 材料科学 材料科学
- 电子工程 电子工程
- 纳米技术 纳米技术
背景情况:
- 神经形晶体管需要稳定,超薄的通道和门介电物来实现突触功能.
- 原子层沉积 (ALD) 可以精确控制薄膜生长和接口质量.
研究的目的:
- 制造具有增强稳定性的超薄神经形晶体管,并探索它们在信息安全中的应用.
- 调查ALD处理接口在设备性能和噪声特征中的作用.
主要方法:
- 使用低温ALD (250°C) 制造10nm以下的--氧化物 (IGZO) 通道和20nm的Al2O3门介电材料.
- 低频噪声分析以描述接口缺陷及其对设备操作的影响.
- 在长时间偏移/照明应力和机械曲下测试设备的稳定性.
- 实施混合音频数字标签用于隐藏信息和三级图像加密系统.
主要成果:
- 实现了对可靠的突触功能至关重要的符合性接口.
- 在ALD衍生接口上确定了可调节的浅层缺陷,作为可控制的1/f噪声源.
- 证明了设备的特殊稳定性:在应力下值电压偏移<330 mV,在500个曲周期后变化<10 mV.
- 实现了混合音频数字标签和功能性三级图像加密系统的89.58%的识别精度.
结论:
- ALD是一种可行的技术,用于制造具有可调节接口特性的稳定,超薄的神经形晶体管.
- 这些设备提供了一个可扩展,节能的平台,用于安全的数据处理和单立体3D内存集成.
- 该研究强调了先进的氧化物半导体设备中缺陷工程和接口动态的重要性.
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