在超薄的h-Lu1-xCaxMnO3薄膜中,由于预期的不适当的铁电性而造成持续的结构扭曲

Detian Yang1, Yaohua Liu2, Haidong Zhou3

  • 1Department of Physics, Shanghai University, 99 Shangda Road BaoShan District, Shanghai, Shanghai, 200444, CHINA.

概括

在六边形的LuMnO3中兴奋剂克服了接口紧,使准2D不正确的铁电学成为可能. 这种应变工程策略增强了铁电扭曲,为先进的超薄电子设备铺平了道路.

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