50 nmAlScNN,10

Hyunmin Cho1, Yubo Wang1, Chloe Leblanc1

  • 1Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.

Nature communications
|January 9, 2026
PubMed
概括

甘化 (AlScN) 铁电器现在可以实现超过10^10的写入周期,这对于非挥发性内存应用来说是千倍的改进. 控制的部分极化开关提高了这些化铁电器的耐用性和能源效率.