100RADFET

J A Moreno-Pérez1, I Ruiz-García2, R Duane3

  • 1PRIMELab, ECsens, Sport and Health University Research Institute (iMUDS), Department of Electronics and Computer Technology, Research Centre for Information and Communications Technologies (CITIC), University of Granada, 18071 Granada, Spain.

PubMed
概括

RADFET VT06辐射探测器在高剂量质子测量中表现出极好的线性和稳定性,使其适合用于航天器任务. 它的性能在各种质子能量和剂量中得到了验证.

相关概念视频

Characteristics of JFET01:21

Characteristics of JFET

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Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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