常规纹调节的MXene网格用于电磁干扰屏蔽
Shan Zhang1,2, Juntao Wu1,2, Zhi-Ling Hou3
1State Key Laboratory of Bioinspired Interfacial Materials Science, Bioinspired Science Innovation Center, Hangzhou International Innovation Institute, Beihang University, Hangzhou, PR China.
Nature communications
|January 10, 2026
概括
开发出自我纹,格子结构的MXene薄膜增强了电磁干扰屏蔽. 这种新的方法提高了薄膜的性能,为敏感设备提供了强大的保护.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 电磁学 电磁学 电磁学 电磁学
背景情况:
- 高性能电磁干扰 (EMI) 屏蔽膜对于保护敏感设备至关重要.
- 由于反射减少,EMI屏蔽能力通常在微/纳米尺度薄膜中显著下降.
- 在亚微米薄膜中实现有效的EMI屏蔽仍然是一个重大挑战.
研究的目的:
- 开发一种有效的策略,以提高超薄膜的EMI屏蔽性能.
- 调查同质应变诱导的自我纹的潜力,以创建微/纳米结构材料.
- 探索格子结构的MXene薄膜的应用,以改善电磁波衰减.
主要方法:
- 采用了一种均的应变策略,利用通过脱水来诱导自我纹的均聚合物收缩.
- 这一过程创造了具有可调节纹幅度 (0.86μm) 的格子结构的MXene膜.
- 测量了制造的薄膜的电磁干扰屏蔽效果.
主要成果:
- 格子结构的MXene薄膜在17微米厚度下实现了高达81.5dB的优异的EMI屏蔽.
- 纹导致了电磁波的额外表面散射,并增强了电导路径.
- 这些膜在恶劣的测试条件下保持了高的EMI屏蔽性能和稳定性.
结论:
- 由均质应变引起的自我纹是一种可行的方法,用于创建具有增强EMI屏蔽的微/纳米结构材料.
- 格子结构膜为改善超薄膜的电磁干扰屏蔽性能提供了一个有希望的途径.
- 这种方法证明了表面规律图案在先进的电磁屏蔽应用中的潜力.
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