实现可扩展的基于铁电的未来一代垂直NAND闪存,具有结合友好的架构:消除和干扰优化的策略
Ickhyun Song1, Juhyun Kim2, Seungmin Lee3
1Department of Electronic Engineering, Hanyang University Seoul 04763 Republic of Korea.
Nanoscale advances
|January 12, 2026
概括
我们引入了一个新的铁电VNAND (Fe-VNAND),使用的是特拉比特细胞阵列晶体管 (TCAT) 结构. 这种设计提高了擦除性能,并减少了高级内存应用程序的干扰.
科学领域:
- 固态物理 固态物理
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
背景情况:
- 现有的NAND闪存架构在擦除性能和干扰特性方面面临限制.
- 铁电NAND (Fe-NAND) 中的无形印氧化 (IGZO) 通道呈现出不良的孔传输,阻碍了可靠性.
研究的目的:
- 提出一种新的铁电VNAND (Fe-VNAND) 架构和删除方案,以克服基于IGZO的内存的局限性.
- 为了提高擦除性能,减少读取干扰,并改善3D Fe-VNAND.在3D Fe-VNAND中的值电压均性.
主要方法:
- 实现一个特拉比特细胞阵列晶体管 (TCAT) 结构与无形IGZO通道和带式工程填充电绝缘体.
- 引入一个量身定制的删除 (ERS) 方案,使用步骤模拟字行偏差.
- 优化源线合重叠 (L_OV) 和选择单词线电压.
主要成果:
- 量身定制的删除方案有效地减轻了过度删除,并实现了可靠的位线传感.
- 优化的兴奋剂重叠和低选择字行电压显著减少读取干扰,并改善值电压均性.
- 一个带式的氧化物/化物填充结构增强了孔注入,增加了30%的内存窗口,并以两倍的速度删除速度.
结论:
- 拟议的Fe-VNAND结构和删除方案与现有的TCAT流相兼容,并且可用于高密度内存.
- 这些创新使人工智能加速器和边缘计算实现了节能,耐干扰的3D Fe-VNAND.
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