接近零的歇斯底里范德瓦尔斯MnAl2S4场效应晶体管具有低最小值电压降解和高热稳定性

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Updated: Jan 13, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

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Seyed Mehdi Sattari-Esfahlan1, Yury Illarionov2, Fang Xu3

  • 1Institute for Microelectronics (TU Wien), Vienna, Austria.

Communications materials
|January 12, 2026
PubMed
概括

这项研究介绍了MnAl2S4作为二维半导体场效应晶体管 (FET) 的新范德瓦尔斯介电器. 这种新材料具有出色的电性能和高可靠性,这对于先进的电子设备至关重要.

关键词:
电气和电子工程 电气和电子工程电子设备 电子设备 电子设备

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