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Updated: Jan 13, 2026

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接口工程Bi0.5Sb1.5Te3/WSe2异构结构用于增强热电性能

Karan Giri1, Yen-Ling Wang1, Yi-Ting Wu1

  • 1Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsin-Chu, Taiwan.

Small (Weinheim an der Bergstrasse, Germany)
|January 12, 2026
PubMed
概括

本研究探讨了用于热电应用的BST/WSe2异构结构. 接口工程通过优化载体生成和能量过来显著提高热电性能.

关键词:
BST/WSe2异构结构的不同结构.能量过器可以过能量.接口工程 接口工程 接口工程脉冲激光沉积脉冲激光沉积热电材料是一种热电材料.

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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