相关实验视频

Updated: Jun 28, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

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在缺陷工程 WS2单层中直接观察超快速缺陷绑定和自由刺激动态

Tae Gwan Park1,2, Xufan Li3, Kyungnam Kang1

  • 1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.

ACS nano
|January 12, 2026
PubMed
概括

研究人员使用先进的光谱学直接观察了二硫化物 (WS2) 中缺陷结合激子的超快动态. 这揭示了对下一代光电子和量子技术的缺陷介导过程的关键见解.

关键词:
一致的合合器缺陷绑定刺激子的缺陷绑定刺激子激电子互转换的过程在硫空缺的职位.过渡金属二甲基二甲基化物超快光谱法是指超快的光谱法.

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Novel Techniques for Observing Structural Dynamics of Photoresponsive Liquid Crystals10:35

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